Controllable Remanent States on Microstructured
Fig.1.SEM micrograph shows the complete magnetic tunnel junction ring devices with an outer diameter of 2/1 and inner diameter of 1/0.5 . m
Fig.2.MR loops for sample A. (a) Major loop. (b) Minor loop (curve 1) and subloops (curves 2 and 3) measured from negative free layer saturation ﬁeld.
The bottom and top layer of insets represent the magnetization conﬁguration of pinned and free layer, respectively. (c) Minor loop (curve 1) and subloops(curves 4 and 5) measured from positive free layer saturation ﬁeld.
Fabrication and Characterization of Microstructured
Fig.1.Cross-sectional scheme of fabrication processes of a ring-shaped MTJ device.
Fig.2.MR curve of the ring-shaped MTJ device shows 16% MR ratio with RA . 17 k 2.m .
the directions of external field and biasing.The lower insets illiustrate the magnetization configurations of free and pinned layers corresponding to the steps as the ﬁeld in the sweep-up process. Hci represents the ﬁeld for each transition on the free layer. Note that the magnetization in the pinned layer is supposed to be in the uniformly horizontal direction.